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dc.contributor.authorKing, J.en
dc.contributor.authorOxley, C. H.en
dc.contributor.authorBrady, R. C.en
dc.contributor.authorBrazil, T. J.en
dc.date.accessioned2013-08-07T15:18:18Z
dc.date.available2013-08-07T15:18:18Z
dc.date.issued2010-12
dc.identifier.citationBrady, R.C., King, J., Oxley, C.H. and Brazil, T.J. (2010) Small and Large Signal Modelling of GaN HEMTs. Emerging Semiconductor devices and techniques workshop, DMU, Sept 2010en
dc.identifier.urihttp://hdl.handle.net/2086/8858
dc.language.isoenen
dc.titleSmall and Large Signal Modelling of GaN HEMTsen
dc.typeOtheren
dc.researchgroupCentre for Electronic and Communications Engineeringen


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