In0.53Ga0.47As Planar Gunn Diodes Operating at a Fundamental Frequency of 164 GHz
We present the first results of a planar Gunn diode made in In0.53Ga0.47As on an InP substrate, operating at a fundamental frequency up to 164 GHz. For a 120-μm-wide device with a 1.3-μm active channel length, the highest power achieved was approximately −10 dBm at 164 GHz.
Citation : Khalid, A. et al. (2013) In0.53Ga0.47As Planar Gunn Diodes Operating at a Fundamental Frequency of 164 GHz. IEEE Electron Device Letters, 34 (1), pp. 39-41
Research Group : Centre for Electronic and Communications Engineering
Peer Reviewed : Yes