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dc.contributor.authorMontes, Miguelen
dc.contributor.authorDunn, G.en
dc.contributor.authorStephen, A.en
dc.contributor.authorKhalid, A.en
dc.contributor.authorLi, C.en
dc.contributor.authorCumming, D.en
dc.contributor.authorOxley, C. H.en
dc.contributor.authorHopper, Richarden
dc.contributor.authorKuball, M.en
dc.date.accessioned2012-05-21T13:19:12Z
dc.date.available2012-05-21T13:19:12Z
dc.date.issued2012
dc.identifier.citationMontes, M. et al. (2012) Reduction of impact ionization in GaAs-Based Planar Gunn Diodes by Anode Contact Design. IEEE Transactions on Electron Devices, 59 (3), pp. 654-660en
dc.identifier.urihttp://hdl.handle.net/2086/6035
dc.language.isoenen
dc.publisherIEEEen
dc.titleReduction of impact ionization in GaAs-Based Planar Gunn Diodes by Anode Contact Designen
dc.typeArticleen
dc.identifier.doihttp://dx.doi.org/10.1109/TED.2011.2177094
dc.researchgroupCentre for Electronic and Communications Engineering
dc.peerreviewedYesen
dc.ref2014.selected1366964034_9910681008349_15_4


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