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dc.contributor.authorMih, Thomas Attia
dc.contributor.authorPaul, Shashi
dc.contributor.authorMilanov, Andrian P.
dc.contributor.authorBhakta, Raghunandan
dc.contributor.authorDevi, Anjana
dc.date.accessioned2010-02-08T11:38:51Z
dc.date.available2010-02-08T11:38:51Z
dc.date.issued2009-10-09
dc.identifier.citationMih, T.A. (2009) Capacitance-voltage analysis of ZrO2 thin films deposited by thermal MOCVD technique. ECS Transactions, 25 (8), pp. 901-907en
dc.identifier.issn1938-6737
dc.identifier.issn1938-5862
dc.identifier.urihttp://hdl.handle.net/2086/3383
dc.description.abstractThe capacitance-voltage (C-V) characteristics of thin films of ZrO2 deposited by thermal metal-organic chemical vapour deposition (MOCVD) have been analyzed. The films were grown at three different temperatures (500, 550 and 600 ºC) and 1 mbar pressure from a novel monomeric zirconium amide-guanidinate complex [Zr(NEtMe)2(guanidinate)2]. The true capacitance was determined from measurements made at different frequencies in order to account for the series and shunt parasitic resistances during C-V measurements. Films grown at 500 and 550 ºC showed no hysteresis while those grown at 600 ºC exhibited a very small hysteresis window 0.16 V for O2 flow of 100 sccm and 0.19 V for 50 sccm O2 flow. A very small voltage shift is also obtained for the device under 10 hr voltage stress. These preliminary in-depth electrical results suggest that quality ZrO2 can be grown from the novel [Zr(NEtMe)2(guanidinate)2] complex precursor paving the way for their use as future gate dielectrics.en
dc.language.isoenen
dc.publisherThe Electrochemical Societyen
dc.subjecthigh-k materialsen
dc.subjectC-MOSen
dc.subjectnew precursorsen
dc.subjectC-V studyen
dc.titleCapacitance-voltage analysis of ZrO2 thin films deposited by thermal MOCVD technique.en
dc.typeArticleen
dc.identifier.doihttp://dx.doi.org/10.1149/1.3207684
dc.researchgroupEmerging Technologies Research Centreen
dc.peerreviewedYesen
dc.researchinstituteInstitute of Engineering Sciences (IES)en


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