• Login
    View Item 
    •   DORA Home
    • Faculty of Computing, Engineering and Media
    • School of Engineering and Sustainable Development
    • View Item
    •   DORA Home
    • Faculty of Computing, Engineering and Media
    • School of Engineering and Sustainable Development
    • View Item
    JavaScript is disabled for your browser. Some features of this site may not work without it.

    Lanthanide oxide thin films by metalorganic chemical vapor deposition employing volatile guanidinate precursors.

    Thumbnail
    Date
    2009-11-24
    Author
    Paul, Shashi;
    Milanov, Andrian P.;
    Toader, Teodor;
    Parala, Harish;
    Barreca, Davide;
    Gasparotto, Alberto;
    Bock, Claudia;
    Becker, Hans-Werner;
    Ngwashi, Divine K.;
    Cross, R. B. M.;
    Kunze, Ulrich;
    Fischer, Roland A.;
    Devi, Anjana
    Metadata
    Show attachments and full item record
    Abstract
    The application of two novel metalorganic complexes, namely the isostructural tris(N,N'diisopropyl-2-dimethlyamido-guanidinato)gadolinium(III) (1) and tris(N,N'-diisopropyl-2-dimethlyamido-guanidinato)dysprosium(III) (2) as precursors for metalorganic chemical vapor deposition (MOCVD) of Gd 2O3 and Dy2O3 is discussed. On the basis of the detailed thermal gravimetric analysis (TGA) and isothermal TGA studies, both the precursors are very volatile and able to deliver continuous mass transport into the gas phase. The extraordinary thermal stability of the precursors was revealed by nulcear magnetic resonance (NMR) decomposition studies. Depositions were carried out in the presence of oxygen at reduced pressure and varying the substrate temperature in the range 300-700 °C. Uniform films with reproducible quality were deposited on Si(100) and Al 2O3(000l) substrates over the entire temperature range. Employing a multitechnique approach (XRD, SEM, AFM, EDX, XPS, RBS, SNMS, C- V), variations of the growth characteristics and film properties with deposition temperature are studied in terms of crystallinity, structure, surface roughness, composition, and electrical properties.
    Description
    Citation : Milanov, A.P. et al (2009) Lanthanide oxide thin films by metalorganic chemical vapor deposition employing volatile guanidinate precursors. Chemistry of Materials, 21 (22), pp. 5443-5455.
    URI
    http://hdl.handle.net/2086/3375
    DOI
    http://dx.doi.org/10.1021/cm902123m
    ISSN : 08974756
    Research Group : Emerging Technologies Research Centre
    Research Institute : Institute of Engineering Sciences (IES)
    Peer Reviewed : Yes
    Collections
    • School of Engineering and Sustainable Development [1940]

    Submission Guide | Reporting Guide | Reporting Tool | DMU Open Access Libguide | Take Down Policy | Connect with DORA
    DMU LIbrary
     

     

    Browse

    All of DORACommunities & CollectionsAuthorsTitlesSubjects/KeywordsResearch InstituteBy Publication DateBy Submission DateThis CollectionAuthorsTitlesSubjects/KeywordsResearch InstituteBy Publication DateBy Submission Date

    My Account

    Login

    Submission Guide | Reporting Guide | Reporting Tool | DMU Open Access Libguide | Take Down Policy | Connect with DORA
    DMU LIbrary