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dc.contributor.authorVershinin, Konstantin
dc.contributor.authorMoens, Peter
dc.contributor.authorBauwens, Filip
dc.contributor.authorNarayanan, E. M. Sankara
dc.contributor.authorTack, Marnix
dc.date.accessioned2010-02-03T14:47:05Z
dc.date.available2010-02-03T14:47:05Z
dc.date.issued2009-04
dc.identifier.citationVershinin, K.; Moens, P.; Bauwens, F.; Narayanan, E.M.S.; Tack, M. (2009); A new method to improve tradeoff performance for advanced power MOSFETs., IEEE Electron Device Letters, 30 (4), pp. 416 - 418.en
dc.identifier.issn0741-3106
dc.identifier.urihttp://hdl.handle.net/2086/3333
dc.language.isoen_USen
dc.publisherIEEEen
dc.subjectpower MOSFETsen
dc.subjectpower semiconductor devicesen
dc.titleA new method to improve tradeoff performance for advanced power MOSFETs.en
dc.typeArticleen
dc.identifier.doihttp://dx.doi.org/10.1109/LED.2009.2014473
dc.researchgroupEmerging Technologies Research Centreen
dc.peerreviewedYesen
dc.ref2014.selected1366964034_0210680081888_15_2


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