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dc.contributor.authorPaul, Shashien
dc.date.accessioned2008-11-24T14:02:21Z
dc.date.available2008-11-24T14:02:21Z
dc.date.issued2006-08-01en
dc.identifier.citationPaul, S. (2006) Determination of density of states in amorphous carbon. IEEE Transactions on Electron Devices, 53(8), pp. 1775-1781.
dc.identifier.issn0018-9383en
dc.identifier.urihttp://hdl.handle.net/2086/281
dc.description.abstractVarious methods have been employed before to deduce the density of states (DOS) in amorphous carbon. However, further investigations show that capacitance measurements on a metal-insulator-semiconductor structure are an appropriate way to deduce the DOS. Thus, an analytical formalism, which agrees well with the experimental data, is developed. This paper reports the structures and techniques used to investigate the DOS in amorphous hydrogenated carbon.
dc.language.isoenen
dc.publisherIEEEen
dc.subjectRAE 2008
dc.subjectUoA 24 Electrical and Electronic Engineering
dc.titleDetermination of density of states in amorphous carbonen
dc.typeArticleen
dc.identifier.doihttp://dx.doi.org/10.1109/TED.2006.877868en
dc.researchgroupEmerging Technologies Research Centre
dc.researchinstituteInstitute of Engineering Sciences (IES)en


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