Heteroepitaxial Beta-Ga2O3 on 4H-SiC for an FET With Reduced Self Heating
A method to improve thermal management of β-Ga 2 O 3 FETs is demonstrated here via simulation of epitaxial growth on a 4H-SiC substrate. Using a recently published device as a model, the reduction achieved in self-heating allows the device to be driven at higher gate voltages and increases the overall performance. For the same operating parameters an 18% increase in peak drain current and 15% reduction in lattice temperature are observed. Device dimensions may be substantially reduced without detriment to performance and normally off operation may be achieved.
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Citation : Russell, S.A.O., Perez-Tomas, A., McConville, C.F., Fisher, C.A., Hamilton, D.P., Mawby, P.A., Jennings, M.R. (2017) Heteroepitaxial Beta-Ga2O3 on 4H-SiC for an FET With Reduced Self Heating. IEEE Journal of the Electron Devices Society, 5(4), pp.256–261.