Improved performance of 4h-sic pin diodes using a novel combined high temperature oxidation and annealing process
In this paper, the application of a novel combined high temperature thermal oxidation and annealing process to mesa-isolated epitaxial-anode 4H-SiC PiN diodes with thick (110 μm) drift regions is presented, the aim of which was to increase the carrier lifetime in the 4H-SiC. Diodes were fabricated using 4H-SiC material having undergone this process, which consisted of a thermal oxidation in dry pure O 2 at 1550°C followed by an argon anneal at the same temperature. Forward current-voltage characterization showed that the oxidised/annealed samples typically showed around 15% lower forward voltage drop and around 40% lower differential on-resistance (at 100 A/cm 2 and 25°C) compared to control sample PiN diodes, whilst reverse recovery tests indicated a carrier lifetime increase also of around 40%. These findings illustrate that the use of this process is a highly effective and efficient way of improving the electrical characteristics of high voltage 4H-SiC bipolar devices.
The Publisher's final version can be found by following the DOI link.
Citation : Fisher, C.A., Jennings, M.R., Sharma, Y.K., Hamilton, D.P., Gammon, P.M., Perez-Tomas, A.,Thomas, S.M., Burrows, S.E., Mawby, P.A. (2014) Improved Performance of 4H-SiC PiN Diodes Using a Novel Combined High Temperature Oxidation and Annealing Process. IEEE Transactions on Semiconductor Manufacturing, 27(3), pp. 443-451.
ISSN : 1558-2345
Research Institute : Institute of Engineering Sciences (IES)
Peer Reviewed : Yes