Now showing items 1-3 of 3
A novel method for the growth of low temperature silicon structures for 3-D flash memory devices
(ECS Transactions, 2009)
Capacitance-voltage analysis of ZrO2 thin films deposited by thermal MOCVD technique.
(The Electrochemical Society, 2009-10-09)
The capacitance-voltage (C-V) characteristics of thin films of ZrO2 deposited by thermal metal-organic chemical vapour deposition (MOCVD) have been analyzed. The films were grown at three different temperatures (500, 550 ...