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dc.contributor.authorSalaoru, Iuliaen
dc.contributor.authorLi, Qingjiangen
dc.contributor.authorKhiat, Alien
dc.contributor.authorProdromakis, Themistoklisen
dc.date.accessioned2016-07-15T09:49:37Z
dc.date.available2016-07-15T09:49:37Z
dc.date.issued2014-09-23
dc.identifier.citationSalaoru, I., Li, Q., Khiat, A. and Prodromakis, T. (2014) Coexistence of memory resistance and memory capacitance in TiO2 solid state devices. Nanoscale Research Letters, 9, pp. 552en
dc.identifier.urihttp://hdl.handle.net/2086/12308
dc.description.abstractThis work exploits the coexistence of both resistance and capacitance memory effects in TiO2-based two-terminal cells. Our Pt/TiO2/TiOx/Pt devices exhibit an interesting combination of hysteresis and non-zero crossing in their current-voltage (I-V) characteristic that indicates the presence of capacitive states. Our experimental results demonstrate that both resistance and capacitance states can be simultaneously set via either voltage cycling and/or voltage pulses. We argue that these state modulations occur due to bias-induced reduction of the TiOx active layer via the displacement of ionic species.en
dc.language.isoenen
dc.publisherSpringeren
dc.subjectReRAMen
dc.subjectMemristoren
dc.subjectMemcapacitoren
dc.subjectTiO2en
dc.subjectNanoscaleen
dc.titleCoexistence of memory resistance and memory capacitance in TiO2 solid state devicesen
dc.typeArticleen
dc.identifier.doihttp://dx.doi.org/10.1186/1556-276X-9-552
dc.peerreviewedYesen
dc.funderEPSRC (Engineering and Physical Sciences Research Council)en
dc.funderNational Nature Scienceen
dc.funderCHIST-ERA ERA-Neten
dc.projectidEP/J00801X/1en
dc.projectidEP/K017829/1en
dc.projectid61171017en
dc.cclicenceCC BYen
dc.date.acceptance2014-09-23en


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