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dc.contributor.authorPaul, Shashien
dc.contributor.authorSaranti, Konstantinaen
dc.contributor.authorAlotaibi, Sultanen
dc.date.accessioned2016-06-27T15:52:30Z
dc.date.available2016-06-27T15:52:30Z
dc.date.issued2016-06-09
dc.identifier.citationPaul, S., Saranti, K. and Alotaibi, S. (2016) A new approach for two-terminal electronic memory devices - Storing information on silicon nanowires. Scientific Reports, 6, art. no. 27506en
dc.identifier.urihttp://hdl.handle.net/2086/12183
dc.descriptionopen access article
dc.description.abstractThe work described in this paper focuses on the utilisation of silicon nanowires as the information storage element in flash-type memory devices. Silicon nanostructures have attracted attention due to interesting electrical and optical properties, and their potential integration into electronic devices. A detailed investigation of the suitability of silicon nanowires as the charge storage medium in two-terminal non-volatile memory devices are presented in this report. The deposition of the silicon nanostructures was carried out at low temperatures (less than 400 °C) using a previously developed a novel method within our research group. Two-terminal non-volatile (2TNV) memory devices and metal-insulator-semiconductor (MIS) structures containing the silicon nanowires were fabricated and an in-depth study of their characteristics was carried out using current-voltage and capacitancetechniques.en
dc.language.isoenen
dc.publisherNatureen
dc.subjectTwo terminal Electronic Memory devicesen
dc.subjectFlash Memoryen
dc.subjectSilicon nanowiresen
dc.subjectPECVDen
dc.titleA new approach for two-terminal electronic memory devices - Storing information on silicon nanowiresen
dc.typeArticleen
dc.identifier.doihttp://dx.doi.org/10.1038/srep27506
dc.researchgroupEmerging Technologies Research Centreen
dc.peerreviewedYesen
dc.funderEPSRC (Engineering and Physical Sciences Research Council)en
dc.projectidEP/E047785/1en
dc.cclicenceCC BYen
dc.date.acceptance2016-05-18en
dc.exception.reasonopen access articleen
dc.researchinstituteInstitute of Engineering Sciences (IES)en


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