A new approach for two-terminal electronic memory devices - Storing information on silicon nanowires
The work described in this paper focuses on the utilisation of silicon nanowires as the information storage element in flash-type memory devices. Silicon nanostructures have attracted attention due to interesting electrical and optical properties, and their potential integration into electronic devices. A detailed investigation of the suitability of silicon nanowires as the charge storage medium in two-terminal non-volatile memory devices are presented in this report. The deposition of the silicon nanostructures was carried out at low temperatures (less than 400 °C) using a previously developed a novel method within our research group. Two-terminal non-volatile (2TNV) memory devices and metal-insulator-semiconductor (MIS) structures containing the silicon nanowires were fabricated and an in-depth study of their characteristics was carried out using current-voltage and capacitancetechniques.
Citation : Paul, S., Saranti, K. and Alotaibi, S. (2016) A new approach for two-terminal electronic memory devices - Storing information on silicon nanowires. Scientific Reports, 6, art. no. 27506
Research Group : Emerging Technologies Research Centre
Research Institute : Institute of Engineering Sciences (IES)
Peer Reviewed : Yes