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dc.contributor.authorAlhalafi, Z. H.en
dc.contributor.authorPaul, Shashien
dc.date.accessioned2014-11-13T09:39:32Z
dc.date.available2014-11-13T09:39:32Z
dc.date.issued2014-10
dc.identifier.citationAlhalafi, Z.H. and Paul, S. (2014) Switching in Polymer Memory Devices based on Polymer and Nanoparticles Admixture. Advances in Science and Technology, 95 (3), pp. 107-112en
dc.identifier.urihttp://hdl.handle.net/2086/10477
dc.description.abstractIn this paper, a non-volatile memory device based on a blend of metal oxides (Known as NiO) and polymer has been investigated. These devices have shown to display memory effects; a marked difference in electrical conductivity between the ‘on’ and ‘off’ states. However, the exact mechanism under-pinning these two conductivities states are not very clear. The structures used in investigation are metal-admixture-metal (MAM) and metal-insulator-semiconductor (MIS) devices. Also, glass and p-types silicon (100 orientations) with a pre-prepared Ohmic back contact were used for the MAM and MIS substrates respectively. This work will address some of the questions in regard to the electrical bistability shown by polymer memory devices.en
dc.language.isoenen
dc.publisherTrans Tech Publicationsen
dc.relation.ispartofseriesAdvances in Science and Technology;
dc.subjectResistive random access memoryen
dc.subjectNicke oxide (NiO)en
dc.subjectOrganic Memoryen
dc.subjectNon-volatile memoryen
dc.titleSwitching in Polymer Memory Devices based on Polymer and Nanoparticles Admixtureen
dc.typeConferenceen
dc.identifier.doihttp://dx.doi.org/10.4028/www.scientific.net/AST.95.107
dc.researchgroupEmerging Technologies Research Centreen
dc.peerreviewedYesen
dc.fundernoneen
dc.projectidnoneen
dc.researchinstituteInstitute of Engineering Sciences (IES)en


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