Device quality SiO2 films by liquid phase deposition (LPD) at 48°C

Manhas, M.; Pease, T. J.; Cross, R. B. M.; Bose, S. C.; Oxley, D. P.; De Souza, M. M.; Sankara Narayanan, E. M.

Date

2002

Author

Manhas, M.;

Bose, S. C.;

Sankara Narayanan, E. M.

Metadata

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Citation : Manhas, M. et al. (2002) Device quality SiO2 films by liquid phase deposition (LPD) at 48°C. Materials Research Society Symposium - Proceedings. 716, pp. 317-323.

URI

http://hdl.handle.net/2086/9246

DOI

http://dx.doi.org/10.1557/PROC-716-B7.9

Research Group : Emerging Technologies Research Centre

Research Institute : Institute of Engineering Sciences (IES)

Peer Reviewed : Yes

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School of Engineering and Sustainable Development [1783]