Device quality SiO2 films by liquid phase deposition (LPD) at 48°C
Date
2002Author
Citation : Manhas, M. et al. (2002) Device quality SiO2 films by liquid phase deposition (LPD) at 48°C. Materials Research Society Symposium - Proceedings. 716, pp. 317-323.
Research Group : Emerging Technologies Research Centre
Research Institute : Institute of Engineering Sciences (IES)
Peer Reviewed : Yes