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    Method for measuring source resistance Rs in saturation region of GaN HEMT device over bias conditions (Vgs,Vds)

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    Date
    2004-03
    Author
    Oxley, C. H.
    Metadata
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    Citation : Oxley, C.H. (2004) Method for measuring source resistance Rs in saturation region of GaN HEMT device over bias conditions (Vgs,Vds), Electronics Letters, 40 (5), 4th March 2004, pp 344-346
    URI
    http://hdl.handle.net/2086/8878
    DOI
    http://dx.doi.org/10.1049/el:20040236
    ISSN : 0013-5194
    Research Group : Centre for Electronic and Communications Engineering
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    • School of Engineering and Sustainable Development [1950]

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