Method for measuring source resistance Rs in saturation region of GaN HEMT device over bias conditions (Vgs,Vds)

Date

2004-03

Author

Oxley, C. H.

Metadata

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Citation : Oxley, C.H. (2004) Method for measuring source resistance Rs in saturation region of GaN HEMT device over bias conditions (Vgs,Vds), Electronics Letters, 40 (5), 4th March 2004, pp 344-346

URI

http://hdl.handle.net/2086/8878

DOI

http://dx.doi.org/10.1049/el:20040236

ISSN : 0013-5194

Research Group : Centre for Electronic and Communications Engineering

Collections

• School of Engineering and Sustainable Development [1950]