Method for measuring source resistance Rs in saturation region of GaN HEMT device over bias conditions (Vgs,Vds)
Citation : Oxley, C.H. (2004) Method for measuring source resistance Rs in saturation region of GaN HEMT device over bias conditions (Vgs,Vds), Electronics Letters, 40 (5), 4th March 2004, pp 344-346
ISSN : 0013-5194
Research Group : Centre for Electronic and Communications Engineering