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dc.contributor.authorKhalid, A.en
dc.contributor.authorLi, C.en
dc.contributor.authorPapageogiou, V.en
dc.contributor.authorDunn, G. M.en
dc.contributor.authorSteer, M. J.en
dc.contributor.authorThayne, I. G,en
dc.contributor.authorKuball, M.en
dc.contributor.authorOxley, C. H.en
dc.contributor.authorMontes, Miguelen
dc.contributor.authorStephen, A.en
dc.contributor.authorGlover, Jamesen
dc.contributor.authorCumming, D. R. S.en
dc.date.accessioned2013-01-10T10:19:52Z
dc.date.available2013-01-10T10:19:52Z
dc.date.issued2013
dc.identifier.citationKhalid, A. et al. (2013) In0.53Ga0.47As Planar Gunn Diodes Operating at a Fundamental Frequency of 164 GHz. IEEE Electron Device Letters, 34 (1), pp. 39-41en
dc.identifier.urihttp://hdl.handle.net/2086/8007
dc.description.abstractWe present the first results of a planar Gunn diode made in In0.53Ga0.47As on an InP substrate, operating at a fundamental frequency up to 164 GHz. For a 120-μm-wide device with a 1.3-μm active channel length, the highest power achieved was approximately −10 dBm at 164 GHz.
dc.language.isoenen
dc.publisherIEEEen
dc.titleIn0.53Ga0.47As Planar Gunn Diodes Operating at a Fundamental Frequency of 164 GHzen
dc.typeArticleen
dc.identifier.doihttp://dx.doi.org/10.1109/LED.2012.2224841
dc.researchgroupCentre for Electronic and Communications Engineering
dc.peerreviewedYesen
dc.ref2014.selected1366964034_9910681008349_15_1


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