Now showing items 1-10 of 22
Real-time error protection of embedded codes for packet erasure and fading channels
Reliable real-time transmission of packetized embedded multimedia data over noisy channels requires the design of fast error control algorithms. For packet erasure channels, efficient forward error correction is obtained ...
Langmuir-Blodgett film deposition of metallic nanoparticles and their application to electronic memory structures.
(American Chemical Society, 2003-04-01)
Feature selective validation (FSV) for validation of computational electromagnetics (CEM). Part I – the FSV method
A goal for the validation of computational electromagnetics (CEM) is to provide the community with a simple computational method that can be used to predict the assessment of electromagnetic compatibility (EMC) data as it ...
Measured thermal images of a Gallium arsenide power mmic with and without RF applied to the input
A gallium arsenide microwave monolithic integrated circuit (MMIC) power amplifier (M/ACom type MAAM71100) has been measured using infra-red microscope technology, with and without the application of a RF input signal. A ...
Shield behaviour of communication cables.
Memory effect in thin films of insulating polymer and C60 nanocomposites
(Institute of Physics, 2006-01-14)
We describe the use of C60 fullerene molecules as the charge storage medium in an insulating poly-vinyl-phenol (PVP) polymer. The simple metal–organic–metal (MOM) sandwich structure devices deposited from solution exhibit ...
Feature selective validation (FSV) for validation of computational electromagnetics (CEM). Part II –assessment of FSV performance
The feature selective validation (FSV) method has been proposed as a technique to allow the objective, quantified, comparison of data for inter alia validation of computational electromagnetics. In the companion paper ...
Measurement of unity gain cutoff frequency and saturation velocity of a GaN HEMT transistor
The measured intrinsic saturation velocity (vsi) of carriers in a gallium nitride (GaN) high electron mobility transistor (HEMT) is very much lower than that predicted using Monte Carlo simulation. A novel method of ...
Fast tree-trellis list viterbi decoding