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Origin of the OFF state variability in ReRAM cells
(IOP Science, 2014-03-20)
This work exploits the switching dynamics of nanoscale resistive random access memory (ReRAM) cells with particular emphasis on the origin of the observed variability when cells are consecutively cycled/programmed at ...
Correlated Resistive/Capacitive State Variability in Solid TiO2 based Memory Devices
In this work, we experimentally demonstrated the correlated resistive/capacitive switching and state variability in practical TiO2 based memory devices. Based on filamentary functional mechanism, we argue that the impedance ...