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Origin of the OFF state variability in ReRAM cells
(IOP Science, 2014-03-20)
This work exploits the switching dynamics of nanoscale resistive random access memory (ReRAM) cells with particular emphasis on the origin of the observed variability when cells are consecutively cycled/programmed at ...
Coexistence of memory resistance and memory capacitance in TiO2 solid state devices
This work exploits the coexistence of both resistance and capacitance memory effects in TiO2-based two-terminal cells. Our Pt/TiO2/TiOx/Pt devices exhibit an interesting combination of hysteresis and non-zero crossing in ...