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Resistive switching characteristics of indium-tin-oxide thin film devices
We demonstrate that indium tin oxide (ITO), when used as an active core material in metal–insulator–metal type devices, facilitates resistive switching. We fabricated devices both on silicon as well as quartz wafers, to ...
Origin of Stochastic Resistive Switching in Devices with Phenomenologically
Nanoscale resistive switching devices are nowadays widely employed in applications of storage, logic and computing. The switching mechanism of metal oxide based devices is normally assumed to be the filamentary formation ...