Now showing items 1-10 of 16
Origin of the OFF state variability in ReRAM cells
(IOP Science, 2014-03-20)
This work exploits the switching dynamics of nanoscale resistive random access memory (ReRAM) cells with particular emphasis on the origin of the observed variability when cells are consecutively cycled/programmed at ...
Resistive switching characteristics of indium-tin-oxide thin film devices
We demonstrate that indium tin oxide (ITO), when used as an active core material in metal–insulator–metal type devices, facilitates resistive switching. We fabricated devices both on silicon as well as quartz wafers, to ...
Stochastic switching of TiO2 based memristive devices with identical initial memory states
In this work, we show that identical TiO2-based memristive devices that possess the same initial resistive states are only phenomenologically similar as their internal structures may vary significantly, which could render ...
Inkjet printing of polyvinyl alcohol multilayers for additive manufacturing applications
Here we demonstrate that inkjet printing technology is capable of producing polyvinyl alcohol (PVOH) multilayer structures. PVOH water-based inks were formulated with the addition of additives such as humectant and pigments. ...
Origin of Stochastic Resistive Switching in Devices with Phenomenologically
Nanoscale resistive switching devices are nowadays widely employed in applications of storage, logic and computing. The switching mechanism of metal oxide based devices is normally assumed to be the filamentary formation ...
Development of a direct feed fused deposition modelling technology for multi-material manufacturing
(AIP publishing (American Institute of Physics), 2016)
Fused Deposition Modelling (FDM) is one of the most widely used Additive Manufacturing (AM) technologies to fabricate a three-dimensional (3D) object via melt processing of a thermoplastic filament. However, it is limited ...
Additive manufacturing of heat-sensitive polymer melt using a pallet-fed material extrusion
Coexistence of memory resistance and memory capacitance in TiO2 solid state devices
This work exploits the coexistence of both resistance and capacitance memory effects in TiO2-based two-terminal cells. Our Pt/TiO2/TiOx/Pt devices exhibit an interesting combination of hysteresis and non-zero crossing in ...
Investigation of the switching mechanism in TiO2-based RRAM: a two-dimensional EDX approach
(ACS American Chemical Society, 2016-07-13)
The next generation of non-volatile memory storage may well be based on resistive switching in metal oxides. TiO2 as transition metal oxide has been widely used as active layer for the fabrication of a variety of multi-state ...
The evanescent waves in metallic strip gratings and complex structures in subwavelength regime
The paper investigates the formation of evanescent waves in metallic strip gratings on the Ag/ZnO/SiO2/Si structure with silver strips when TEz incident wave in the radiofrequency range was used. The Ag/ZnO/SiO2/Si structure ...