Now showing items 1-4 of 4
Origin of the OFF state variability in ReRAM cells
(IOP Science, 2014-03-20)
This work exploits the switching dynamics of nanoscale resistive random access memory (ReRAM) cells with particular emphasis on the origin of the observed variability when cells are consecutively cycled/programmed at ...
Resistive switching characteristics of indium-tin-oxide thin film devices
We demonstrate that indium tin oxide (ITO), when used as an active core material in metal–insulator–metal type devices, facilitates resistive switching. We fabricated devices both on silicon as well as quartz wafers, to ...
Origin of Stochastic Resistive Switching in Devices with Phenomenologically
Nanoscale resistive switching devices are nowadays widely employed in applications of storage, logic and computing. The switching mechanism of metal oxide based devices is normally assumed to be the filamentary formation ...
Investigation of the switching mechanism in TiO2-based RRAM: a two-dimensional EDX approach
(ACS American Chemical Society, 2016-07-13)
The next generation of non-volatile memory storage may well be based on resistive switching in metal oxides. TiO2 as transition metal oxide has been widely used as active layer for the fabrication of a variety of multi-state ...