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Investigation of the switching mechanism in TiO2-based RRAM: a two-dimensional EDX approach
(ACS American Chemical Society, 2016-07-13)
The next generation of non-volatile memory storage may well be based on resistive switching in metal oxides. TiO2 as transition metal oxide has been widely used as active layer for the fabrication of a variety of multi-state ...
Emulating long-term synaptic dynamics with memristive devices
The potential of memristive devices is often seeing in implementing neuromorphic architectures for achieving brain-like computation. However, the designing procedures do not allow for extended manipulation of the material, ...