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In0.53Ga0.47As Planar Gunn Diodes Operating at a Fundamental Frequency of 164 GHz
We present the first results of a planar Gunn diode made in In0.53Ga0.47As on an InP substrate, operating at a fundamental frequency up to 164 GHz. For a 120-μm-wide device with a 1.3-μm active channel length, the highest ...
Impact ionisation electroluminescence in planar GaAs-based heterostructure gunn diodes: spatial distribution and impact of doping non-uniformities
(American Institute of Physics, 2013-03-27)
When biased on the negative differential resistance regime, electroluminescence (EL) is emitted from planar GaAs heterostructure Gunn diodes due to the recombination of electrons in the device channel with holes that are ...
Improvements in thermionic cooling through engineering of the heterostructure interface using Monte Carlo simulations
(AIP Publishing LLC, 2013-07-30)
A self-consistent Ensemble Monte Carlo (EMC) model was developed to simulate the thermionic effect in heterostructure barrier coolers. The model was validated on an InGaAs-InGaAsP heterostructure device of variable barrier ...