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Origin of the OFF state variability in ReRAM cells
(IOP Science, 2014-03-20)
This work exploits the switching dynamics of nanoscale resistive random access memory (ReRAM) cells with particular emphasis on the origin of the observed variability when cells are consecutively cycled/programmed at ...
Memory Impedance in TiO2 based Metal-Insulator-Metal Devices
Large attention has recently been given to a novel technology named memristor, for having the potential of becoming the new electronic device standard. Yet, its manifestation as the fourth missing element is rather ...