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Memory Impedance in TiO2 based Metal-Insulator-Metal Devices
Large attention has recently been given to a novel technology named memristor, for having the potential of becoming the new electronic device standard. Yet, its manifestation as the fourth missing element is rather ...
Correlated Resistive/Capacitive State Variability in Solid TiO2 based Memory Devices
In this work, we experimentally demonstrated the correlated resistive/capacitive switching and state variability in practical TiO2 based memory devices. Based on filamentary functional mechanism, we argue that the impedance ...