Browsing Faculty of Computing, Engineering and Media by Subject "C-V study"

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Capacitance-voltage analysis of ZrO2 thin films deposited by thermal MOCVD technique.

Mih, Thomas Attia; Paul, Shashi; Milanov, Andrian P.; Bhakta, Raghunandan; Devi, Anjana (Article)

The capacitance-voltage (C-V) characteristics of thin films of ZrO2 deposited by thermal metal-organic chemical vapour deposition (MOCVD) have been analyzed. The films were grown at three different temperatures (500, 550 ...