Reduction of impact ionization in GaAs-Based Planar Gunn Diodes by Anode Contact Design

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dc.contributor.author	Montes, Miguel	en
dc.contributor.author	Dunn, G.	en
dc.contributor.author	Stephen, A.	en
dc.contributor.author	Khalid, A.	en
dc.contributor.author	Li, C.	en
dc.contributor.author	Cumming, D.	en
dc.contributor.author	Oxley, C. H.	en
dc.contributor.author	Hopper, Richard	en
dc.contributor.author	Kuball, M.	en
dc.date.accessioned	2012-05-21T13:19:12Z
dc.date.available	2012-05-21T13:19:12Z
dc.date.issued	2012
dc.identifier.citation	Montes, M. et al. (2012) Reduction of impact ionization in GaAs-Based Planar Gunn Diodes by Anode Contact Design. IEEE Transactions on Electron Devices, 59 (3), pp. 654-660	en
dc.identifier.uri	http://hdl.handle.net/2086/6035
dc.language.iso	en	en
dc.publisher	IEEE	en
dc.title	Reduction of impact ionization in GaAs-Based Planar Gunn Diodes by Anode Contact Design	en
dc.type	Article	en
dc.identifier.doi	http://dx.doi.org/10.1109/TED.2011.2177094
dc.researchgroup	Centre for Electronic and Communications Engineering
dc.peerreviewed	Yes	en
dc.ref2014.selected	1366964034_9910681008349_15_4

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