Reduction of impact ionization in GaAs-Based Planar Gunn Diodes by Anode Contact Design

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dc.contributor.author Montes, Miguel en
dc.contributor.author Dunn, G. en
dc.contributor.author Stephen, A. en
dc.contributor.author Khalid, A. en
dc.contributor.author Li, C. en
dc.contributor.author Cumming, D. en
dc.contributor.author Oxley, C. H. en
dc.contributor.author Hopper, Richard en
dc.contributor.author Kuball, M. en
dc.date.accessioned 2012-05-21T13:19:12Z
dc.date.available 2012-05-21T13:19:12Z
dc.date.issued 2012
dc.identifier.citation Montes, M. et al. (2012) Reduction of impact ionization in GaAs-Based Planar Gunn Diodes by Anode Contact Design. IEEE Transactions on Electron Devices, 59 (3), pp. 654-660 en
dc.identifier.uri http://hdl.handle.net/2086/6035
dc.language.iso en en
dc.publisher IEEE en
dc.title Reduction of impact ionization in GaAs-Based Planar Gunn Diodes by Anode Contact Design en
dc.type Article en
dc.identifier.doi http://dx.doi.org/10.1109/TED.2011.2177094
dc.researchgroup Centre for Electronic and Communications Engineering
dc.peerreviewed Yes en
dc.ref2014.selected 1366964034_9910681008349_15_4


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