Rare-earth substituted HfO2 thin films grown by metalorganic chemical vapor deposition.

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dc.contributor.author Devi, Anjana
dc.contributor.author Cwik, Stefan
dc.contributor.author Xu, Ke
dc.contributor.author Milanov, Andrian P.
dc.contributor.author Noei, Heshmat
dc.contributor.author Wang, Yuemin
dc.contributor.author Barreca, Davide
dc.contributor.author Meijerd, Jan
dc.contributor.author Rogallad, Detlef
dc.contributor.author Kahn, Divine
dc.contributor.author Cross, R. B. M.
dc.contributor.author Parala, Harish
dc.contributor.author Paul, Shashi
dc.date.accessioned 2012-01-03T10:24:59Z
dc.date.available 2012-01-03T10:24:59Z
dc.date.issued 2011-10-29
dc.identifier.citation Devi, A. et al. (2011) Rare-earth substituted HfO2 thin films grown by metalorganic chemical vapor deposition. Thin Solid Films, 520 (14), pp. 4512-4517 en
dc.identifier.uri http://hdl.handle.net/2086/5478
dc.description.abstract Thin films of HfGdOx and HfDyOx were deposited by metalorganic chemical vapor deposition (MOCVD) utilizing guanidinate precursors for Hf, Gd and Dy. The close match in the thermal properties of the precursors enabled the MOCVD of rare-earth (RE) substituted HfO2 over a wide temperature window. Film deposition was carried out in the temperature range 300–700 °C in the presence of oxygen on Si(100) substrates. HfGdOx films were analyzed in detail for their structure, composition and morphology using X-ray diffraction, Rutherford backscattering spectrometry, proton induced X-ray emission, X-ray photoelectron spectroscopy and scanning electron microscopy. The electrical properties of HfGdOx in terms of capacitance–voltage and current–voltage characteristics of metal-insulator-semiconductor device structures were evaluated. en
dc.language.iso en en
dc.publisher Elsevier en
dc.subject MOCVD en
dc.subject RE-substituted HfO2 en
dc.subject composition en
dc.subject morphology en
dc.subject electrical characteristics en
dc.title Rare-earth substituted HfO2 thin films grown by metalorganic chemical vapor deposition. en
dc.type Article en
dc.identifier.doi http://dx.doi.org/10.1016/j.tsf.2011.10.141
dc.researchgroup Emerging Technologies Research Centre en
dc.peerreviewed Yes en
dc.ref2014.selected 1366964034_0410680122613_15_3


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