Rare-earth substituted HfO2 thin films grown by metalorganic chemical vapor deposition.

Date
2011-10-29
Authors
Devi, Anjana
Cwik, Stefan
Xu, Ke
Milanov, Andrian P.
Noei, Heshmat
Wang, Yuemin
Barreca, Davide
Meijerd, Jan
Rogallad, Detlef
Kahn, Divine
Journal Title
Journal ISSN
ISSN
Volume Title
Publisher
Elsevier
Peer reviewed
Yes
Abstract
Thin films of HfGdOx and HfDyOx were deposited by metalorganic chemical vapor deposition (MOCVD) utilizing guanidinate precursors for Hf, Gd and Dy. The close match in the thermal properties of the precursors enabled the MOCVD of rare-earth (RE) substituted HfO2 over a wide temperature window. Film deposition was carried out in the temperature range 300–700 °C in the presence of oxygen on Si(100) substrates. HfGdOx films were analyzed in detail for their structure, composition and morphology using X-ray diffraction, Rutherford backscattering spectrometry, proton induced X-ray emission, X-ray photoelectron spectroscopy and scanning electron microscopy. The electrical properties of HfGdOx in terms of capacitance–voltage and current–voltage characteristics of metal-insulator-semiconductor device structures were evaluated.
Description
Keywords
MOCVD, RE-substituted HfO2, composition, morphology, electrical characteristics
Citation
Devi, A. et al. (2011) Rare-earth substituted HfO2 thin films grown by metalorganic chemical vapor deposition. Thin Solid Films, 520 (14), pp. 4512-4517
Research Institute
Institute of Engineering Sciences (IES)