Optimising the low temperature growth of uniform ZnO nanowires.

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dc.contributor.author Gabrielyan, Nare
dc.contributor.author Paul, Shashi
dc.contributor.author Cross, R. B. M.
dc.date.accessioned 2010-07-14T08:31:23Z
dc.date.available 2010-07-14T08:31:23Z
dc.date.issued 2010
dc.identifier.citation Gabrielyan, N., Paul, S. and Cross, R.B.M. (2010) Optimising the low temperature growth of uniform ZnO nanowires. Materials Research Society Symposium Proceedings, 1201 pp. 295-300 en
dc.identifier.isbn 978-160511174-2
dc.identifier.issn 02729172
dc.identifier.uri http://hdl.handle.net/2086/3937
dc.description.abstract Zinc oxide (ZnO) nanowires have been widely investigated and various different methods of their synthesis have been suggested. This work is devoted to the optimisation of the growth conditions for uniform and evenly distributed ZnO nanowire arrays. The nanowire growth process includes two steps: 1. Radio-frequency (RF) magnetron sputtering of a ZnO nucleation layer onto a substrate; 2. A hydrothermal growth step of ZnO nanowires using the aforementioned sputtered layer as a template. The optimisation process was divided into two sets of experiments: (i) the deposition of different thicknesses of the ZnO nucleation layer and the subsequent nanowire growth step (using the same conditions) for each thickness. The results revealed a strong dependence of the nanowire size upon the seed layer thickness and structural properties; (ii) the second set of experiments were based on growth solution temperature variation for the nucleation layers of the same thicknesses. This also showed nanowire size and distribution change with solution temperature variation. en
dc.language.iso en en
dc.publisher Materials Research Soceity en
dc.subject ZnO nanowires en
dc.subject growth temperature en
dc.subject solution low temperature technique en
dc.title Optimising the low temperature growth of uniform ZnO nanowires. en
dc.type Conference en
dc.identifier.doi http://dx.doi.org/10.1557/PROC-1201-H10-50
dc.researchgroup Emerging Technologies Research Centre en
dc.peerreviewed Yes en


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