Rare-Earth based Oxide and Nitride thin films employing volatile homoleptic guanidinate precursors.

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dc.contributor.author Milanov, Andrian P.
dc.contributor.author Thiede, Tobias
dc.contributor.author Hellwig, Malte
dc.contributor.author Parala, Harish
dc.contributor.author Bock, Claudia
dc.contributor.author Becker, Hans-Werner
dc.contributor.author Ngwashi, Divine K.
dc.contributor.author Cross, R. B. M.
dc.contributor.author Paul, Shashi
dc.contributor.author Ukunze, Ulrich
dc.contributor.author Fischer, Roland A.
dc.contributor.author Devi, Anjana
dc.date.accessioned 2010-02-08T11:46:23Z
dc.date.available 2010-02-08T11:46:23Z
dc.date.issued 2009-10-09
dc.identifier.citation Milanov, A. P. (2009) Rare-Earth based Oxide and Nitride thin films employing volatile homoleptic guanidinate precursors. ECS Transactions. 25 (8), pp.143-150. en
dc.identifier.issn 1938-6737
dc.identifier.issn 1938-5862
dc.identifier.uri http://hdl.handle.net/2086/3384
dc.description.abstract The application of the metalorganic compound tris(N,N'-diisopropyl-2-dimethlyamidoguanidinato)gadolinium(III) (1) as a precursor for MOCVD of Gd2O3 is discussed. Depositions were carried out in the presence of oxygen at reduced pressure and varying the substrate temperature in the range 300 - 700{degree sign}C. Employing a multi-technique approach (XRD, SEM, AFM, EDX, RBS, SNMS, SE, C-V), variations of the growth characteristics and film properties with deposition temperature are studied in terms of crystallinity, structure, surface roughness, composition, optical and electrical properties. In addition, the use of 1 as single source precursor for the MOCVD of GdN thin films is also demonstrated. en
dc.language.iso en en
dc.publisher The Electrochemical Society en
dc.subject rare-earth high-k materials en
dc.subject low temperature deposition en
dc.subject C-V analysis en
dc.title Rare-Earth based Oxide and Nitride thin films employing volatile homoleptic guanidinate precursors. en
dc.type Article en
dc.identifier.doi http://dx.doi.org/10.1149/1.3207585
dc.researchgroup Emerging Technologies Research Centre en
dc.peerreviewed Yes en


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