Capacitance-voltage analysis of ZrO2 thin films deposited by thermal MOCVD technique.

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dc.contributor.author Mih, Thomas Attia
dc.contributor.author Paul, Shashi
dc.contributor.author Milanov, Andrian P.
dc.contributor.author Bhakta, Raghunandan
dc.contributor.author Devi, Anjana
dc.date.accessioned 2010-02-08T11:38:51Z
dc.date.available 2010-02-08T11:38:51Z
dc.date.issued 2009-10-09
dc.identifier.citation Mih, T.A. (2009) Capacitance-voltage analysis of ZrO2 thin films deposited by thermal MOCVD technique. ECS Transactions, 25 (8), pp. 901-907 en
dc.identifier.issn 1938-6737
dc.identifier.issn 1938-5862
dc.identifier.uri http://hdl.handle.net/2086/3383
dc.description.abstract The capacitance-voltage (C-V) characteristics of thin films of ZrO2 deposited by thermal metal-organic chemical vapour deposition (MOCVD) have been analyzed. The films were grown at three different temperatures (500, 550 and 600 ºC) and 1 mbar pressure from a novel monomeric zirconium amide-guanidinate complex [Zr(NEtMe)2(guanidinate)2]. The true capacitance was determined from measurements made at different frequencies in order to account for the series and shunt parasitic resistances during C-V measurements. Films grown at 500 and 550 ºC showed no hysteresis while those grown at 600 ºC exhibited a very small hysteresis window 0.16 V for O2 flow of 100 sccm and 0.19 V for 50 sccm O2 flow. A very small voltage shift is also obtained for the device under 10 hr voltage stress. These preliminary in-depth electrical results suggest that quality ZrO2 can be grown from the novel [Zr(NEtMe)2(guanidinate)2] complex precursor paving the way for their use as future gate dielectrics. en
dc.language.iso en en
dc.publisher The Electrochemical Society en
dc.subject high-k materials en
dc.subject C-MOS en
dc.subject new precursors en
dc.subject C-V study en
dc.title Capacitance-voltage analysis of ZrO2 thin films deposited by thermal MOCVD technique. en
dc.type Article en
dc.identifier.doi http://dx.doi.org/10.1149/1.3207684
dc.researchgroup Emerging Technologies Research Centre en
dc.peerreviewed Yes en


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