Electrical and morphological properties of polystyrene thin films for organic electronic applications.

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dc.contributor.author Prime, Dominic
dc.contributor.author Paul, Shashi
dc.date.accessioned 2010-02-08T11:22:22Z
dc.date.available 2010-02-08T11:22:22Z
dc.date.issued 2009-10-28
dc.identifier.citation Prime, D. and Paul, S. (2009) Electrical and morphological properties of polystyrene thin films for organic electronic applications. Vacuum, 84 (10), pp. 1240-1243. en
dc.identifier.issn 0042-207X
dc.identifier.uri http://hdl.handle.net/2086/3382
dc.description.abstract This study investigates the electrical and morphological properties of polystyrene layers in the nanometre thickness range for organic and polymer based electronic applications. The paper aims to providing conduction data and information on trapped charges present in the polystyrene layer, as well as investigating how polystyrene properties change under differing annealing conditions. The maximum dielectric strength was found to be 4.0 MV cm−1, while fixed trapped charge and mobile trapped charge average densities were calculated to be 9.9 × 10^11 cm−2 and 2.6 × 10^12 cm−2 respectively. Optimum electrical characteristics were obtained at an anneal temperature of 90 °C, which is just below the glass transition temperature for polystyrene. en
dc.description.sponsorship The first author would like to thank the Engineering and Physical Sciences Research Council EPSRC and the National Physical Laboratory NPL for the financial support received for his studentship. The second author would like to thank EPSRC for the financial support Grant No. EP/ E047785/1. en
dc.language.iso en en
dc.publisher Elsevier en
dc.subject thin film en
dc.subject organic electronics en
dc.subject dielectric en
dc.subject polystyrene en
dc.title Electrical and morphological properties of polystyrene thin films for organic electronic applications. en
dc.type Article en
dc.identifier.doi http://dx.doi.org/10.1016/j.vacuum.2009.10.033
dc.researchgroup Emerging Technologies Research Centre en
dc.peerreviewed Yes en


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