Lanthanide oxide thin films by metalorganic chemical vapor deposition employing volatile guanidinate precursors.

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dc.contributor.author Paul, Shashi
dc.contributor.author Milanov, Andrian P.
dc.contributor.author Toader, Teodor
dc.contributor.author Parala, Harish
dc.contributor.author Barreca, Davide
dc.contributor.author Gasparotto, Alberto
dc.contributor.author Bock, Claudia
dc.contributor.author Becker, Hans-Werner
dc.contributor.author Ngwashi, Divine K.
dc.contributor.author Cross, R. B. M.
dc.contributor.author Kunze, Ulrich
dc.contributor.author Fischer, Roland A.
dc.contributor.author Devi, Anjana
dc.date.accessioned 2010-02-05T14:06:43Z
dc.date.available 2010-02-05T14:06:43Z
dc.date.issued 2009-11-24
dc.identifier.citation Milanov, A.P. et al (2009) Lanthanide oxide thin films by metalorganic chemical vapor deposition employing volatile guanidinate precursors. Chemistry of Materials, 21 (22), pp. 5443-5455. en
dc.identifier.issn 08974756
dc.identifier.uri http://hdl.handle.net/2086/3375
dc.description.abstract The application of two novel metalorganic complexes, namely the isostructural tris(N,N'diisopropyl-2-dimethlyamido-guanidinato)gadolinium(III) (1) and tris(N,N'-diisopropyl-2-dimethlyamido-guanidinato)dysprosium(III) (2) as precursors for metalorganic chemical vapor deposition (MOCVD) of Gd 2O3 and Dy2O3 is discussed. On the basis of the detailed thermal gravimetric analysis (TGA) and isothermal TGA studies, both the precursors are very volatile and able to deliver continuous mass transport into the gas phase. The extraordinary thermal stability of the precursors was revealed by nulcear magnetic resonance (NMR) decomposition studies. Depositions were carried out in the presence of oxygen at reduced pressure and varying the substrate temperature in the range 300-700 °C. Uniform films with reproducible quality were deposited on Si(100) and Al 2O3(000l) substrates over the entire temperature range. Employing a multitechnique approach (XRD, SEM, AFM, EDX, XPS, RBS, SNMS, C- V), variations of the growth characteristics and film properties with deposition temperature are studied in terms of crystallinity, structure, surface roughness, composition, and electrical properties. en
dc.language.iso en en
dc.subject deposition en
dc.subject dysprosium en
dc.subject electric properties en
dc.subject film growth en
dc.subject gadolinium en
dc.subject gravimetric analysis en
dc.subject oxide films en
dc.subject oxygen en
dc.subject resonance en
dc.subject semiconducting aluminum compounds en
dc.subject substrates en
dc.subject surface roughness en
dc.subject surface structure en
dc.subject thermodynamic stability en
dc.title Lanthanide oxide thin films by metalorganic chemical vapor deposition employing volatile guanidinate precursors. en
dc.type Article en
dc.identifier.doi http://dx.doi.org/10.1021/cm902123m
dc.researchgroup Emerging Technologies Research Centre en
dc.peerreviewed Yes en
dc.ref2014.selected 1366964034_0410680146941_15_1


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