Lanthanide oxide thin films by metalorganic chemical vapor deposition employing volatile guanidinate precursors.

Date
2009-11-24
Authors
Paul, Shashi
Milanov, Andrian P.
Toader, Teodor
Parala, Harish
Barreca, Davide
Gasparotto, Alberto
Bock, Claudia
Becker, Hans-Werner
Ngwashi, Divine K.
Cross, R. B. M.
Journal Title
Journal ISSN
ISSN
08974756
Volume Title
Publisher
Peer reviewed
Yes
Abstract
The application of two novel metalorganic complexes, namely the isostructural tris(N,N'diisopropyl-2-dimethlyamido-guanidinato)gadolinium(III) (1) and tris(N,N'-diisopropyl-2-dimethlyamido-guanidinato)dysprosium(III) (2) as precursors for metalorganic chemical vapor deposition (MOCVD) of Gd 2O3 and Dy2O3 is discussed. On the basis of the detailed thermal gravimetric analysis (TGA) and isothermal TGA studies, both the precursors are very volatile and able to deliver continuous mass transport into the gas phase. The extraordinary thermal stability of the precursors was revealed by nulcear magnetic resonance (NMR) decomposition studies. Depositions were carried out in the presence of oxygen at reduced pressure and varying the substrate temperature in the range 300-700 °C. Uniform films with reproducible quality were deposited on Si(100) and Al 2O3(000l) substrates over the entire temperature range. Employing a multitechnique approach (XRD, SEM, AFM, EDX, XPS, RBS, SNMS, C- V), variations of the growth characteristics and film properties with deposition temperature are studied in terms of crystallinity, structure, surface roughness, composition, and electrical properties.
Description
Keywords
deposition, dysprosium, electric properties, film growth, gadolinium, gravimetric analysis, oxide films, oxygen, resonance, semiconducting aluminum compounds, substrates, surface roughness, surface structure, thermodynamic stability
Citation
Milanov, A.P. et al (2009) Lanthanide oxide thin films by metalorganic chemical vapor deposition employing volatile guanidinate precursors. Chemistry of Materials, 21 (22), pp. 5443-5455.
Research Institute
Institute of Engineering Sciences (IES)