Non-volatile memory device- using a blend of polymer and ferroelectric nanoparticles.
In recent years, the interest in the application of organic materials in electronic devices (light emitting diodes, field effect transistors, solar cells), has shown a rapid increase. A new family of organic electronic device is organic memory device. These devices, based on a thin film of nano-sized particles and small molecules embledded in an organic layer attracted considerable attention. This work presents the polymer memory device which is made of a blend of poly(vinyl acetate) and ferroelectric barium titanate nanoparticles. A polymer blend of polyvinyl acetate and barium titanate (BaTiO3) nanoparticles was prepared in methanol and spin coated onto a glass substrate marked with thin Al tracks and top contacts were evaporated onto the blend after drying - this resulted in a metal-organic-metal (MOM) structure. The current-voltage (I-V) behaviour of MOM devices shows that the devices can be switched from a high conductivity state to a low conductivity state, by applying an external electric field - this property can be exploited to store data bits. The working mechanism, in these devices is based on ferroelectric properties of barium titanate.
Citation : Paul, S. and Salaoru, I. (2008) Non-volatile memory device- using a blend of polymer and ferroelectric nanoparticles. Journal of optoelectronics and advanced materials, 10 (12) pp. 3461-3464.
ISSN : 1454-4164
Research Group : Emerging Technologies Research Centre
Research Institute : Institute of Engineering Sciences (IES)