Investigating the stability of thin film transistors with zinc oxide as the channel layer

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dc.contributor.author Cross, R. B. M.
dc.contributor.author De Souza, M. M.
dc.date.accessioned 2010-02-04T15:12:22Z
dc.date.available 2010-02-04T15:12:22Z
dc.date.issued 2007
dc.identifier.citation Cross, R. B. M. De Souza, M. M. (2007) Investigating the stability of thin film transistors with zinc oxide as the channel layer. IEEE International Reliability Physics Symposium, pp. 467-471. en
dc.identifier.uri http://hdl.handle.net/2086/3352
dc.language.iso en en
dc.title Investigating the stability of thin film transistors with zinc oxide as the channel layer en
dc.type Conference en
dc.identifier.doi http://dx.doi.org/10.1109/RELPHY.2007.369935
dc.researchgroup Emerging Technologies Research Centre en
dc.peerreviewed Yes en


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