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dc.contributor.authorCross, R. B. M.
dc.contributor.authorDe Souza, M. M.
dc.date.accessioned2010-02-04T15:12:22Z
dc.date.available2010-02-04T15:12:22Z
dc.date.issued2007
dc.identifier.citationCross, R. B. M. De Souza, M. M. (2007) Investigating the stability of thin film transistors with zinc oxide as the channel layer. IEEE International Reliability Physics Symposium, pp. 467-471.en
dc.identifier.urihttp://hdl.handle.net/2086/3352
dc.language.isoenen
dc.titleInvestigating the stability of thin film transistors with zinc oxide as the channel layeren
dc.typeConferenceen
dc.identifier.doihttp://dx.doi.org/10.1109/RELPHY.2007.369935
dc.researchgroupEmerging Technologies Research Centreen
dc.peerreviewedYesen
dc.researchinstituteInstitute of Engineering Sciences (IES)en


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