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dc.contributor.authorSweet, Mark
dc.contributor.authorNarayanan, E. M. Sankara
dc.contributor.authorMoens, Peter
dc.contributor.authorDesoete, Bart
dc.contributor.authorVershinin, Konstantin
dc.contributor.authorYip, Li Juin
dc.date.accessioned2010-02-03T15:00:02Z
dc.date.available2010-02-03T15:00:02Z
dc.date.issued2009-06
dc.identifier.citationSweet, M. et al. (2009) Experimental demonstration of a vertical LOCOS insulated base transistor. 21st International Symposium on Power Semiconductor Devices & IC's, 2009 (ISPSD 2009), 14-18 June 2009, pp.235 - 238.en
dc.identifier.urihttp://hdl.handle.net/2086/3334
dc.language.isoen_USen
dc.publisherIEEEen
dc.subjectIBTen
dc.subjectpower semiconductor devicesen
dc.titleExperimental demonstration of a vertical LOCOS insulated base transistor.en
dc.typeConferenceen
dc.identifier.doihttp://dx.doi.org/10.1109/ISPSD.2009.5158045
dc.researchgroupEmerging Technologies Research Centreen
dc.peerreviewedYesen
dc.ref2014.selected1366964034_0210680081888_15_1


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