A new method to improve tradeoff performance for advanced power MOSFETs.

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dc.contributor.author Vershinin, Konstantin
dc.contributor.author Moens, Peter
dc.contributor.author Bauwens, Filip
dc.contributor.author Narayanan, E. M. Sankara
dc.contributor.author Tack, Marnix
dc.date.accessioned 2010-02-03T14:47:05Z
dc.date.available 2010-02-03T14:47:05Z
dc.date.issued 2009-04
dc.identifier.citation Vershinin, K.; Moens, P.; Bauwens, F.; Narayanan, E.M.S.; Tack, M. (2009); A new method to improve tradeoff performance for advanced power MOSFETs., IEEE Electron Device Letters, 30 (4), pp. 416 - 418. en
dc.identifier.issn 0741-3106
dc.identifier.uri http://hdl.handle.net/2086/3333
dc.language.iso en_US en
dc.publisher IEEE en
dc.subject power MOSFETs en
dc.subject power semiconductor devices en
dc.title A new method to improve tradeoff performance for advanced power MOSFETs. en
dc.type Article en
dc.identifier.doi http://dx.doi.org/10.1109/LED.2009.2014473
dc.researchgroup Emerging Technologies Research Centre en
dc.peerreviewed Yes en
dc.ref2014.selected 1366964034_0210680081888_15_2


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