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dc.contributor.authorCross, R. B. M.
dc.contributor.authorPaul, Shashi
dc.contributor.authorSalaoru, Iulia
dc.date.accessioned2010-02-03T11:32:49Z
dc.date.available2010-02-03T11:32:49Z
dc.date.issued2008
dc.identifier.citationCross, R. B. M. Paul, S. and Salaoru, I. (2008) Nanostructures of ZnO as elements in inorganic/organic hybrid electrically writable memory devices. Materials Research Society Symposium Proceedings, 1114, pp. G12en
dc.identifier.urihttp://hdl.handle.net/2086/3328
dc.description.abstractIn this work, we propose a hybrid inorganic/organic memory device that is fabricated using simple techniques at a temperature compatible with large area plastic substrate materials. The devices are a combination of the organic polymers polystyrene and polyvinyl acetate and nanorods of zinc oxide (ZnO), grown via a hydrothermal process which uses nanoparticles of ZnO as growth precursors. Current-voltage (I-V) and capacitance-voltage (C-V) measurements of devices incorporating ZnO nanorods show significant hysteresis in the characteristics. This is in direct contrast to the all-organic devices, where the leakage current was determined to be less than 1pA, and where no hysteresis was evident is either the I-V or C-V investigations. It is postulated that the addition of ZnO nanorods to the structure increases the overall conductivity of the device and ZnO nanorods act as a charge storage medium in the polymer matrix, which leads to the charging/discharging behaviour demonstrated in the electrical measurements.
dc.language.isoenen
dc.subjectmemory devices
dc.subjectzinc oxide
dc.titleNanostructures of ZnO as elements in inorganic/organic hybrid electrically writable memory devices.en
dc.typeConferenceen
dc.identifier.doihttp://dx.doi.org/10.1557/PROC-1114-G12-05
dc.researchgroupEmerging Technologies Research Centreen
dc.peerreviewedYesen
dc.researchinstituteInstitute of Engineering Sciences (IES)en


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