Show simple item record

dc.contributor.authorCross, R. B. M.
dc.contributor.authorPaul, Shashi
dc.contributor.authorSalaoru, Iulia
dc.identifier.citationCross, R. B. M. Paul, S. and Salaoru, I. (2008) Nanostructures of ZnO as elements in inorganic/organic hybrid electrically writable memory devices. Materials Research Society Symposium Proceedings, 1114, pp. G12en
dc.description.abstractIn this work, we propose a hybrid inorganic/organic memory device that is fabricated using simple techniques at a temperature compatible with large area plastic substrate materials. The devices are a combination of the organic polymers polystyrene and polyvinyl acetate and nanorods of zinc oxide (ZnO), grown via a hydrothermal process which uses nanoparticles of ZnO as growth precursors. Current-voltage (I-V) and capacitance-voltage (C-V) measurements of devices incorporating ZnO nanorods show significant hysteresis in the characteristics. This is in direct contrast to the all-organic devices, where the leakage current was determined to be less than 1pA, and where no hysteresis was evident is either the I-V or C-V investigations. It is postulated that the addition of ZnO nanorods to the structure increases the overall conductivity of the device and ZnO nanorods act as a charge storage medium in the polymer matrix, which leads to the charging/discharging behaviour demonstrated in the electrical measurements.
dc.subjectmemory devices
dc.subjectzinc oxide
dc.titleNanostructures of ZnO as elements in inorganic/organic hybrid electrically writable memory devices.en
dc.researchgroupEmerging Technologies Research Centreen
dc.researchinstituteInstitute of Engineering Sciences (IES)en

Files in this item


There are no files associated with this item.

This item appears in the following Collection(s)

Show simple item record