High voltage polycrystalline thin-film transistor with variable doping slots in the offset region.

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dc.contributor.author Xu, Y. Z.
dc.contributor.author Cross, R. B. M.
dc.contributor.author Manhas, M.
dc.contributor.author Clough, F. J.
dc.contributor.author DeSouza, M. M.
dc.contributor.author Narayanan, E. M. Sankara
dc.contributor.author Flores, D.
dc.contributor.author Rebello, J.
dc.contributor.author Vellvehi, M.
dc.contributor.author Millan, J.
dc.date.accessioned 2010-01-28T09:42:13Z
dc.date.available 2010-01-28T09:42:13Z
dc.date.issued 2002
dc.identifier.citation Xu, Y. Z.; Cross, R.; Manhas, M.; Clough, F. J.; DeSouza, M. M.; Narayanan, E. M. S.; Flores, D.; Rebello, J.; Vellvehi, M.; Millan, J. (2002) High voltage polycrystalline thin-film transistor with variable doping slots in the offset region. Applied Physics Letters, 80 (12), pp. 2192-2194. en
dc.identifier.issn 0003-6951
dc.identifier.uri http://hdl.handle.net/2086/3255
dc.language.iso en en
dc.publisher American Institute of Physics en
dc.title High voltage polycrystalline thin-film transistor with variable doping slots in the offset region. en
dc.type Article en
dc.identifier.doi http://dx.doi.org/10.1063/1.1462859
dc.peerreviewed Yes en


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