A comparison of the performance and stability of ZnO-TFTs with silicon dioxide and nitride as gate insulators.

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dc.contributor.author Cross, R. B. M.
dc.contributor.author De Souza, M. M.
dc.contributor.author Deane, S. C.
dc.contributor.author Young, N. D.
dc.date.accessioned 2010-01-28T09:36:51Z
dc.date.available 2010-01-28T09:36:51Z
dc.date.issued 2008
dc.identifier.citation Cross, R. B. M.; De Souza, M. M.; Deane, S. C.; Young, N. D. (2008) A comparison of the performance and stability of ZnO-TFTs with silicon dioxide and nitride as gate insulators. IEEE Transactions on Electronic Devices, 55 (5), pp. 1109-1115. en
dc.identifier.issn 0018-9383
dc.identifier.uri http://hdl.handle.net/2086/3253
dc.language.iso en en
dc.publisher IEEE en
dc.title A comparison of the performance and stability of ZnO-TFTs with silicon dioxide and nitride as gate insulators. en
dc.type Article en
dc.identifier.doi http://dx.doi.org/10.1109/TED.2008.918662
dc.peerreviewed Yes en
dc.ref2014.selected 1366964034_0410680122613_15_4


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