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dc.contributor.authorOxley, C. H.en
dc.contributor.authorHopper, Richarden
dc.date.accessioned2008-11-24T14:02:24Z
dc.date.available2008-11-24T14:02:24Z
dc.date.issued2007-03-08en
dc.identifier.citationOxley, C.H. and Hopper, R. (2007) The effect of transparency within a semiconductor on emissivity mapping for thermal profile measurements of a semiconductor. IET Proc Science, Measurement and Technology, 1(2), pp. 79-81.
dc.identifier.issn1751-8822en
dc.identifier.urihttp://hdl.handle.net/2086/289
dc.description.abstractThe paper reports on infra-red (IR) measurements made on silicon and gallium arsenide substrates which are transparent to IR radiation. The work showed that the measured emissivity is dependent on the wafer back-face technology, for example, a gold heat-sink or epoxy attachment. The work also indicated that the measured emissivity for the thermal mapping of a device is a function of the emitted radiation from the front, back face and layer interfaces, as well as internally reflected radiation and will be dependent on the thickness of the semiconductor wafer. Experimental work has shown that the two-temperature emissivity correction method will give a very accurate value of the total surface emissivity received from the sample.
dc.language.isoenen
dc.publisherIETen
dc.subjectRAE 2008
dc.subjectUoA 24 Electrical and Electronic Engineering
dc.titleThe effect of transparency within a semiconductor on emissivity mapping for thermal profile measurements of a semiconductoren
dc.typeArticleen
dc.identifier.doihttp://dx.doi.org/10.1049/iet-smt:20060091en
dc.researchgroupCentre for Electronic and Communications Engineering


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