The effect of transparency within a semiconductor on emissivity mapping for thermal profile measurements of a semiconductor

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dc.contributor.author Oxley, C. H. en
dc.contributor.author Hopper, Richard en
dc.date.accessioned 2008-11-24T14:02:24Z
dc.date.available 2008-11-24T14:02:24Z
dc.date.issued 2007-03-08 en
dc.identifier.citation Oxley, C.H. and Hopper, R. (2007) The effect of transparency within a semiconductor on emissivity mapping for thermal profile measurements of a semiconductor. IET Proc Science, Measurement and Technology, 1(2), pp. 79-81.
dc.identifier.issn 1751-8822 en
dc.identifier.uri http://hdl.handle.net/2086/289
dc.description.abstract The paper reports on infra-red (IR) measurements made on silicon and gallium arsenide substrates which are transparent to IR radiation. The work showed that the measured emissivity is dependent on the wafer back-face technology, for example, a gold heat-sink or epoxy attachment. The work also indicated that the measured emissivity for the thermal mapping of a device is a function of the emitted radiation from the front, back face and layer interfaces, as well as internally reflected radiation and will be dependent on the thickness of the semiconductor wafer. Experimental work has shown that the two-temperature emissivity correction method will give a very accurate value of the total surface emissivity received from the sample.
dc.language.iso en en
dc.publisher IET en
dc.subject RAE 2008
dc.subject UoA 24 Electrical and Electronic Engineering
dc.title The effect of transparency within a semiconductor on emissivity mapping for thermal profile measurements of a semiconductor en
dc.type Article en
dc.identifier.doi http://dx.doi.org/10.1049/iet-smt:20060091 en
dc.researchgroup Centre for Electronic and Communications Engineering


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