The effect of transparency within a semiconductor on emissivity mapping for thermal profile measurements of a semiconductor

Date
2007-03-08
Authors
Oxley, C. H.
Hopper, Richard
Journal Title
Journal ISSN
ISSN
1751-8822
Volume Title
Publisher
IET
Peer reviewed
Abstract
The paper reports on infra-red (IR) measurements made on silicon and gallium arsenide substrates which are transparent to IR radiation. The work showed that the measured emissivity is dependent on the wafer back-face technology, for example, a gold heat-sink or epoxy attachment. The work also indicated that the measured emissivity for the thermal mapping of a device is a function of the emitted radiation from the front, back face and layer interfaces, as well as internally reflected radiation and will be dependent on the thickness of the semiconductor wafer. Experimental work has shown that the two-temperature emissivity correction method will give a very accurate value of the total surface emissivity received from the sample.
Description
Keywords
RAE 2008, UoA 24 Electrical and Electronic Engineering
Citation
Oxley, C.H. and Hopper, R. (2007) The effect of transparency within a semiconductor on emissivity mapping for thermal profile measurements of a semiconductor. IET Proc Science, Measurement and Technology, 1(2), pp. 79-81.
Research Institute