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dc.contributor.authorPaul, Shashien
dc.contributor.authorMolloy, A.en
dc.contributor.authorPearson, C.en
dc.contributor.authorCousins, M. A.en
dc.contributor.authorGreen, M.
dc.contributor.authorKolliopoulou, S.
dc.contributor.authorDimitrakis, P.
dc.contributor.authorNormand, P.
dc.contributor.authorTsoukalas, D.
dc.contributor.authorPetty, M. C.
dc.date.accessioned2008-11-24T14:02:23Z
dc.date.available2008-11-24T14:02:23Z
dc.date.issued2003-04-01en
dc.identifier.citationPaul, S. et al. (2003) Langmuir-Blodgett film deposition of metallic nanoparticles and their application to electronic memory structures. Nano Letters, 3(4), pp. 533-536.
dc.identifier.issn1530-6984en
dc.identifier.urihttp://hdl.handle.net/2086/287
dc.descriptionPaul made the major contribution to this output, which formed the basis of one invited international talk (13th International Workshop on the Physics of Semiconductor, India), an invited article (in the Journal Small) and has secured international and national collaborations (Prof. D Tsoukalas) National Technical University, Athens, Greece and (Dr A Podhorodecki) Institute of Physics & Wroclaw University of Technology, Wroclaw, Poland and (Dr M Green) King’s Collage London.en
dc.language.isoenen
dc.publisherAmerican Chemical Societyen
dc.subjectRAE 2008
dc.subjectUoA 24 Electrical and Electronic Engineering
dc.titleLangmuir-Blodgett film deposition of metallic nanoparticles and their application to electronic memory structures.en
dc.typeArticleen
dc.identifier.doihttp://dx.doi.org/10.1021/nl034008ten
dc.researchgroupEmerging Technologies Research Centre
dc.researchinstituteInstitute of Engineering Sciences (IES)en


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