Memory effect in thin films of insulating polymer and C60 nanocomposites

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dc.contributor.author Paul, Shashi en
dc.contributor.author Kanwal, A. en
dc.contributor.author Chhowalla, M. en
dc.date.accessioned 2008-11-24T14:02:23Z
dc.date.available 2008-11-24T14:02:23Z
dc.date.issued 2006-01-14 en
dc.identifier.citation Paul, S., Chhowalla, M. and Kanwal, A (2006) Memory effect in thin films of insulating polymer and C60 nanocomposites. Nanotechnology, 17(1), pp. 145-151.
dc.identifier.issn 0957-4484 en
dc.identifier.uri http://hdl.handle.net/2086/286
dc.description.abstract We describe the use of C60 fullerene molecules as the charge storage medium in an insulating poly-vinyl-phenol (PVP) polymer. The simple metal–organic–metal (MOM) sandwich structure devices deposited from solution exhibit distinct high and low conduction states, which can be used to program read, write and erase memory operations. The charge transfer and retention in C60 molecules at room temperature has been confirmed by capacitance–voltage and Raman spectroscopy measurements. Conducting atomic force microscopy has been used to demonstrate that high and low conductance states persist even at the nanoscale.
dc.language.iso en en
dc.publisher Institute of Physics en
dc.subject RAE 2008
dc.subject UoA 24 Electrical and Electronic Engineering
dc.title Memory effect in thin films of insulating polymer and C60 nanocomposites en
dc.type Article en
dc.identifier.doi http://dx.doi.org/10.1088/0957-4484/17/1/023 en
dc.researchgroup Emerging Technologies Research Centre


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