Measurement of unity gain cutoff frequency and saturation velocity of a GaN HEMT transistor

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dc.contributor.author Oxley, C. H. en
dc.contributor.author Uren, M. J. en
dc.date.accessioned 2008-11-24T14:02:22Z
dc.date.available 2008-11-24T14:02:22Z
dc.date.issued 2005-02-01 en
dc.identifier.citation Oxley, C.H. and Uren, M.J. (2005) Measurement of unity gain cutoff frequency and saturation velocity of a GaN HEMT transistor. IEEE Transactions on Electron Devices, 52(2), pp. 165-169.
dc.identifier.issn 0018-9383 en
dc.identifier.uri http://hdl.handle.net/2086/284
dc.description.abstract The measured intrinsic saturation velocity (vsi) of carriers in a gallium nitride (GaN) high electron mobility transistor (HEMT) is very much lower than that predicted using Monte Carlo simulation. A novel method of extraction of the intrinsic saturation velocity (vsi) of carriers has been developed utilising the deembedded s-parameters, thus enabling the calculation of vsi over a wide range of bias conditions. The method is equally applicable for gallium arsenide (GaAs) and indium phosphide (InP) based transistors. The measurements indicate for GaN-based HEMT a maximum deembedded saturation velocity of 1.1×105 m/s close to the pinchoff voltage (VP). It was found that self-heating had only a weak effect on the saturation velocity up to junction temperatures approaching 140°C above ambient.
dc.language.iso en en
dc.publisher IEEE en
dc.subject RAE 2008
dc.subject UoA 24 Electrical and Electronic Engineering
dc.title Measurement of unity gain cutoff frequency and saturation velocity of a GaN HEMT transistor en
dc.type Article en
dc.identifier.doi http://dx.doi.org/10.1109/TED.2004.842719 en
dc.researchgroup Centre for Electronic and Communications Engineering


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