Determination of density of states in amorphous carbon

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dc.contributor.author	Paul, Shashi	en
dc.date.accessioned	2008-11-24T14:02:21Z
dc.date.available	2008-11-24T14:02:21Z
dc.date.issued	2006-08-01	en
dc.identifier.citation	Paul, S. (2006) Determination of density of states in amorphous carbon. IEEE Transactions on Electron Devices, 53(8), pp. 1775-1781.
dc.identifier.issn	0018-9383	en
dc.identifier.uri	http://hdl.handle.net/2086/281
dc.description.abstract	Various methods have been employed before to deduce the density of states (DOS) in amorphous carbon. However, further investigations show that capacitance measurements on a metal-insulator-semiconductor structure are an appropriate way to deduce the DOS. Thus, an analytical formalism, which agrees well with the experimental data, is developed. This paper reports the structures and techniques used to investigate the DOS in amorphous hydrogenated carbon.
dc.language.iso	en	en
dc.publisher	IEEE	en
dc.subject	RAE 2008
dc.subject	UoA 24 Electrical and Electronic Engineering
dc.title	Determination of density of states in amorphous carbon	en
dc.type	Article	en
dc.identifier.doi	http://dx.doi.org/10.1109/TED.2006.877868	en
dc.researchgroup	Emerging Technologies Research Centre