Determination of density of states in amorphous carbon

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dc.contributor.author Paul, Shashi en
dc.date.accessioned 2008-11-24T14:02:21Z
dc.date.available 2008-11-24T14:02:21Z
dc.date.issued 2006-08-01 en
dc.identifier.citation Paul, S. (2006) Determination of density of states in amorphous carbon. IEEE Transactions on Electron Devices, 53(8), pp. 1775-1781.
dc.identifier.issn 0018-9383 en
dc.identifier.uri http://hdl.handle.net/2086/281
dc.description.abstract Various methods have been employed before to deduce the density of states (DOS) in amorphous carbon. However, further investigations show that capacitance measurements on a metal-insulator-semiconductor structure are an appropriate way to deduce the DOS. Thus, an analytical formalism, which agrees well with the experimental data, is developed. This paper reports the structures and techniques used to investigate the DOS in amorphous hydrogenated carbon.
dc.language.iso en en
dc.publisher IEEE en
dc.subject RAE 2008
dc.subject UoA 24 Electrical and Electronic Engineering
dc.title Determination of density of states in amorphous carbon en
dc.type Article en
dc.identifier.doi http://dx.doi.org/10.1109/TED.2006.877868 en
dc.researchgroup Emerging Technologies Research Centre


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