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dc.contributor.authorPaul, Shashien
dc.identifier.citationPaul, S. (2006) Determination of density of states in amorphous carbon. IEEE Transactions on Electron Devices, 53(8), pp. 1775-1781.
dc.description.abstractVarious methods have been employed before to deduce the density of states (DOS) in amorphous carbon. However, further investigations show that capacitance measurements on a metal-insulator-semiconductor structure are an appropriate way to deduce the DOS. Thus, an analytical formalism, which agrees well with the experimental data, is developed. This paper reports the structures and techniques used to investigate the DOS in amorphous hydrogenated carbon.
dc.subjectRAE 2008
dc.subjectUoA 24 Electrical and Electronic Engineering
dc.titleDetermination of density of states in amorphous carbonen
dc.researchgroupEmerging Technologies Research Centre
dc.researchinstituteInstitute of Engineering Sciences (IES)en

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